12-inch wafer processing with ring attachment is possible! Surface modification, removal of inorganic/organic contamination! Ideal for evaluation and research before mass production! High speed, low cost.
★ 12-inch wafer processing with ring attachment is possible!
★ Surface modification, removal of inorganic/organic contamination!
★ Ideal for evaluation and research before mass production!
★ High speed, low cost
★ Various optional features
★ Compatible with 300mm wafers and rectangular substrates
[Main Performance]
- Achievable pressure: 6.0 Pa or lower (when gas ballast is closed)
* Uses a dry pump with a maximum exhaust speed of 500 L/min
- Leak rate: 1.07 Pa/min or lower
* Build-up standard value: Converted to chamber volume as 0.1 Pa·L/sec
- RF power control: 13.56 MHz / 100 to 1,000 W
- Process gas flow control: Within ±10% of the set value
- Etching performance
Inorganic etching rate: Average of 20 nm/min or more ±20%
Organic etching rate: Average of 500 nm/min or more ±20%
Test chips placed at 5 points on a φ300 electrode
* Placed at 4 points on the φ280 circumference and 1 point in the center
* When using rectangular electrodes [optional], placed at 4 points on the corners of a 300 mm square and 1 point in the center
Wide-range auto-tuning